Posted by: JackRyan88 | January 6, 2011

Samsung DDR4 Memory

Though it seems as if DDR3 just recently claimed the crown as the PC industry’s memory standard, its successor may already have appeared. Samsung Electronics announced on Tuesday that it has completed development on the first DDR4 DRAM module, using 30nm-class process technology.

The DDR4 module uses a new technology called Pseudo Open Drain (POD), which lets DDR4 consume half the electric current of DDR3 when reading and writing data. New circuit architecture will let DDR4 attain transfer speeds between 1.6 Gbps and 3.2 Gbps.

According to a Samsung press release, this first DDR4 module is rated at 2.133 Gbps, and runs at 1.2 volts; 30nm DDR3, at 1.35 or 1.5 volts, can only get up to 1.6 Gbps. Samsung also claims that, when used in laptops, DDR4 reduces power consumption by 40 percent compared to equivalent DDR3 RAM.

Samsung says it has provided 1.2-volt 2GB DDR4 DIMMs to a controller maker for testing, and is working with server makers to complete JEDEC standardization of DDR4 technologies before the end of 2011. Production of the modules is expected to begin in 2012.


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